Techniniai dokumentai
Specifikacijos
Markė
SemikronMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Pakuotės tipas
SEMITOP1
Configuration
Single
Tvirtinimo tipas
PCB Mount
Channel Type
N
Kaiščių skaičius
4
Transistor Configuration
Single
Matmenys
31 x 24 x 15.43mm
Minimali darbinė temperatūra
-40 °C
Maksimali darbinė temperatūra
+150 °C
Kilmės šalis
Italy
Produkto aprašymas
Single IGBT Modules
SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 23,10
už 1 vnt. (be PVM)
€ 27,95
už 1 vnt. (su PVM)
1
€ 23,10
už 1 vnt. (be PVM)
€ 27,95
už 1 vnt. (su PVM)
1
Techniniai dokumentai
Specifikacijos
Markė
SemikronMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Pakuotės tipas
SEMITOP1
Configuration
Single
Tvirtinimo tipas
PCB Mount
Channel Type
N
Kaiščių skaičius
4
Transistor Configuration
Single
Matmenys
31 x 24 x 15.43mm
Minimali darbinė temperatūra
-40 °C
Maksimali darbinė temperatūra
+150 °C
Kilmės šalis
Italy
Produkto aprašymas
Single IGBT Modules
SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.