Techniniai dokumentai
Specifikacijos
Markė
Semikron DanfossMaximum Continuous Collector Current
616 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
20V
Number of Transistors
2
Configuration
Dual
Pakuotės tipas
SEMITRANS3
Tvirtinimo tipas
Screw Mount
Channel Type
N
Kaiščių skaičius
7
Switching Speed
12kHz
Transistor Configuration
Half Bridge
Matmenys
106.4 x 61.4 x 30.5mm
Minimali darbinė temperatūra
-40 °C
Maksimali darbinė temperatūra
+175 °C
Kilmės šalis
Slovakia
Produkto aprašymas
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
€ 313,50
€ 313,50 už 1 vnt. (be PVM)
€ 379,34
€ 379,34 už 1 vnt. (su PVM)
1

€ 313,50
€ 313,50 už 1 vnt. (be PVM)
€ 379,34
€ 379,34 už 1 vnt. (su PVM)
1

Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
kiekis | Vieneto kaina |
---|---|
1 - 1 | € 313,50 |
2 - 4 | € 284,05 |
5+ | € 271,70 |
Techniniai dokumentai
Specifikacijos
Markė
Semikron DanfossMaximum Continuous Collector Current
616 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
20V
Number of Transistors
2
Configuration
Dual
Pakuotės tipas
SEMITRANS3
Tvirtinimo tipas
Screw Mount
Channel Type
N
Kaiščių skaičius
7
Switching Speed
12kHz
Transistor Configuration
Half Bridge
Matmenys
106.4 x 61.4 x 30.5mm
Minimali darbinė temperatūra
-40 °C
Maksimali darbinė temperatūra
+175 °C
Kilmės šalis
Slovakia
Produkto aprašymas
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.