SiC N-Channel MOSFET, 55 A, 1200 V, 3-Pin TO-247N ROHM SCT3040KLGC11

RS kodas: 148-6974Gamintojas: ROHMGamintojo kodas: SCT3040KLGC11
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Techniniai dokumentai

Specifikacijos

Markė

ROHM

Channel Type

N

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

1200 V

Pakuotės tipas

TO-247N

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

60 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.6V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

165 W

Transistor Configuration

Single

Maximum Gate Source Voltage

22 V

Plotis

5mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Transistor Material

SiC

Ilgis

16mm

Typical Gate Charge @ Vgs

107 nC @ 18 V

Aukštis

21mm

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€ 46,08

už 1 vnt. (be PVM)

€ 55,76

už 1 vnt. (su PVM)

SiC N-Channel MOSFET, 55 A, 1200 V, 3-Pin TO-247N ROHM SCT3040KLGC11
sticker-462

€ 46,08

už 1 vnt. (be PVM)

€ 55,76

už 1 vnt. (su PVM)

SiC N-Channel MOSFET, 55 A, 1200 V, 3-Pin TO-247N ROHM SCT3040KLGC11
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kaina
1 - 4€ 46,08
5 - 9€ 40,38
10 - 24€ 39,33
25+€ 38,38

Ideate. Create. Collaborate

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

ROHM

Channel Type

N

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

1200 V

Pakuotės tipas

TO-247N

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

60 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.6V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

165 W

Transistor Configuration

Single

Maximum Gate Source Voltage

22 V

Plotis

5mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Transistor Material

SiC

Ilgis

16mm

Typical Gate Charge @ Vgs

107 nC @ 18 V

Aukštis

21mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more