N-Channel MOSFET, 3.7 A, 1700 V, 3-Pin TO-3PFM ROHM SCT2H12NZGC11

RS kodas: 133-2860Gamintojas: ROHMGamintojo kodas: SCT2H12NZGC11
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Techniniai dokumentai

Specifikacijos

Markė

ROHM

Channel Type

N

Maximum Continuous Drain Current

3.7 A

Maximum Drain Source Voltage

1700 V

Serija

SCT2H12NZ

Pakuotės tipas

TO-3PFM

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

1.6V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-6 V, +22 V

Transistor Material

Si

Ilgis

16mm

Typical Gate Charge @ Vgs

14 nC @ 18 V

Plotis

5mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Aukštis

21mm

Forward Diode Voltage

4.3V

Produkto aprašymas

N-Channel MOSFET Transistors, ROHM

MOSFET Transistors, ROHM Semiconductor

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€ 9,345

Each (In a Pack of 2) (be PVM)

€ 11,307

Each (In a Pack of 2) (su PVM)

N-Channel MOSFET, 3.7 A, 1700 V, 3-Pin TO-3PFM ROHM SCT2H12NZGC11
Pasirinkite pakuotės tipą
sticker-462

€ 9,345

Each (In a Pack of 2) (be PVM)

€ 11,307

Each (In a Pack of 2) (su PVM)

N-Channel MOSFET, 3.7 A, 1700 V, 3-Pin TO-3PFM ROHM SCT2H12NZGC11
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
2 - 8€ 9,345€ 18,69
10+€ 7,77€ 15,54

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

ROHM

Channel Type

N

Maximum Continuous Drain Current

3.7 A

Maximum Drain Source Voltage

1700 V

Serija

SCT2H12NZ

Pakuotės tipas

TO-3PFM

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

1.6V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-6 V, +22 V

Transistor Material

Si

Ilgis

16mm

Typical Gate Charge @ Vgs

14 nC @ 18 V

Plotis

5mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Aukštis

21mm

Forward Diode Voltage

4.3V

Produkto aprašymas

N-Channel MOSFET Transistors, ROHM

MOSFET Transistors, ROHM Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more