ROHM RU1C002ZP P-Channel MOSFET, 200 mA, 20 V, 3-Pin SOT-323 RU1C002ZPTCL

RS kodas: 124-6835Gamintojas: ROHMGamintojo kodas: RU1C002ZPTCL
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

ROHM

Channel Type

P

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

20 V

Serija

RU1C002ZP

Pakuotės tipas

SOT-323

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

9.6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

150 mW

Maximum Gate Source Voltage

-10 V, +10 V

Plotis

1.35mm

Number of Elements per Chip

1

Ilgis

2.1mm

Typical Gate Charge @ Vgs

1.4 nC @ 4.5 V

Maksimali darbinė temperatūra

+150 °C

Aukštis

1mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Produkto aprašymas

P-Channel MOSFET Transistors, ROHM

MOSFET Transistors, ROHM Semiconductor

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Sandėlio informacija laikinai nepasiekiama.

€ 5,89

€ 0,059 Each (In a Pack of 100) (be PVM)

€ 7,13

€ 0,071 Each (In a Pack of 100) (su PVM)

ROHM RU1C002ZP P-Channel MOSFET, 200 mA, 20 V, 3-Pin SOT-323 RU1C002ZPTCL
Pasirinkite pakuotės tipą
sticker-462

€ 5,89

€ 0,059 Each (In a Pack of 100) (be PVM)

€ 7,13

€ 0,071 Each (In a Pack of 100) (su PVM)

ROHM RU1C002ZP P-Channel MOSFET, 200 mA, 20 V, 3-Pin SOT-323 RU1C002ZPTCL
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

ROHM

Channel Type

P

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

20 V

Serija

RU1C002ZP

Pakuotės tipas

SOT-323

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

9.6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

150 mW

Maximum Gate Source Voltage

-10 V, +10 V

Plotis

1.35mm

Number of Elements per Chip

1

Ilgis

2.1mm

Typical Gate Charge @ Vgs

1.4 nC @ 4.5 V

Maksimali darbinė temperatūra

+150 °C

Aukštis

1mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Produkto aprašymas

P-Channel MOSFET Transistors, ROHM

MOSFET Transistors, ROHM Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more