P-Channel MOSFET, 100 mA, 20 V, 3-Pin SC-85 ROHM RU1C001ZPTL

RS kodas: 177-6793Gamintojas: ROHMGamintojo kodas: RU1C001ZPTL
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Techniniai dokumentai

Specifikacijos

Markė

ROHM

Channel Type

P

Maximum Continuous Drain Current

100 mA

Maximum Drain Source Voltage

20 V

Serija

RU1C001ZP

Pakuotės tipas

SC-85

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

40 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

200 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

10 V

Plotis

1.35mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.1mm

Typical Gate Charge @ Vgs

2.2 nC @ 4.5 V

Aukštis

0.95mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Kilmės šalis

Thailand

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€ 0,069

Each (In a Pack of 200) (be PVM)

€ 0,084

Each (In a Pack of 200) (su PVM)

P-Channel MOSFET, 100 mA, 20 V, 3-Pin SC-85 ROHM RU1C001ZPTL
sticker-462

€ 0,069

Each (In a Pack of 200) (be PVM)

€ 0,084

Each (In a Pack of 200) (su PVM)

P-Channel MOSFET, 100 mA, 20 V, 3-Pin SC-85 ROHM RU1C001ZPTL
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
200 - 200€ 0,069€ 13,86
400 - 400€ 0,062€ 12,39
600 - 800€ 0,057€ 11,34
1000 - 1800€ 0,051€ 10,29
2000+€ 0,047€ 9,45

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

ROHM

Channel Type

P

Maximum Continuous Drain Current

100 mA

Maximum Drain Source Voltage

20 V

Serija

RU1C001ZP

Pakuotės tipas

SC-85

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

40 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

200 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

10 V

Plotis

1.35mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.1mm

Typical Gate Charge @ Vgs

2.2 nC @ 4.5 V

Aukštis

0.95mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Kilmės šalis

Thailand

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more