N-Channel MOSFET, 5 A, 20 V, 6-Pin TSMT-6 ROHM RQ6C050UNTR

RS kodas: 177-6585Gamintojas: ROHMGamintojo kodas: RQ6C050UNTR
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Techniniai dokumentai

Specifikacijos

Markė

ROHM

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

20 V

Serija

RQ6C050UN

Pakuotės tipas

TSMT-6

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

30 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±10 V

Plotis

1.8mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3mm

Typical Gate Charge @ Vgs

12 nC @ 4.5 V

Aukštis

0.95mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Kilmės šalis

Thailand

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€ 0,467

Each (In a Pack of 20) (be PVM)

€ 0,565

Each (In a Pack of 20) (su PVM)

N-Channel MOSFET, 5 A, 20 V, 6-Pin TSMT-6 ROHM RQ6C050UNTR
sticker-462

€ 0,467

Each (In a Pack of 20) (be PVM)

€ 0,565

Each (In a Pack of 20) (su PVM)

N-Channel MOSFET, 5 A, 20 V, 6-Pin TSMT-6 ROHM RQ6C050UNTR
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

ROHM

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

20 V

Serija

RQ6C050UN

Pakuotės tipas

TSMT-6

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

30 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±10 V

Plotis

1.8mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3mm

Typical Gate Charge @ Vgs

12 nC @ 4.5 V

Aukštis

0.95mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Kilmės šalis

Thailand

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more