P-Channel MOSFET, 7 A, 12 V, 8-Pin TSMT-8 ROHM RQ1A070APTR

RS kodas: 177-6781Gamintojas: ROHMGamintojo kodas: RQ1A070APTR
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Techniniai dokumentai

Specifikacijos

Markė

ROHM

Channel Type

P

Maximum Continuous Drain Current

7 A

Maximum Drain Source Voltage

12 V

Pakuotės tipas

TSMT-8

Serija

RQ1A070AP

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

1.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

0 to -8 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.1mm

Typical Gate Charge @ Vgs

80 nC @ 4.5 V

Plotis

2.5mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Aukštis

0.8mm

Kilmės šalis

Japan

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€ 0,35

Each (In a Pack of 20) (be PVM)

€ 0,423

Each (In a Pack of 20) (su PVM)

P-Channel MOSFET, 7 A, 12 V, 8-Pin TSMT-8 ROHM RQ1A070APTR
sticker-462

€ 0,35

Each (In a Pack of 20) (be PVM)

€ 0,423

Each (In a Pack of 20) (su PVM)

P-Channel MOSFET, 7 A, 12 V, 8-Pin TSMT-8 ROHM RQ1A070APTR
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

ROHM

Channel Type

P

Maximum Continuous Drain Current

7 A

Maximum Drain Source Voltage

12 V

Pakuotės tipas

TSMT-8

Serija

RQ1A070AP

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

1.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

0 to -8 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.1mm

Typical Gate Charge @ Vgs

80 nC @ 4.5 V

Plotis

2.5mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Aukštis

0.8mm

Kilmės šalis

Japan

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more