Dual P-Channel MOSFET, 4 A, 30 V, 8-Pin TSMT-8 ROHM QS8J4TR
Techniniai dokumentai
Specifikacijos
Markė
ROHMChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
TSMT-8
Serija
QS8J4
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
84 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.5 W
Maximum Gate Source Voltage
±20 V
Plotis
2.5mm
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+150 °C
Ilgis
3.1mm
Typical Gate Charge @ Vgs
13 nC @ 10 V (N Channel)
Forward Diode Voltage
1.2V
Aukštis
0.8mm
Kilmės šalis
Japan
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 0,464
Each (In a Pack of 10) (be PVM)
€ 0,561
Each (In a Pack of 10) (su PVM)
10
€ 0,464
Each (In a Pack of 10) (be PVM)
€ 0,561
Each (In a Pack of 10) (su PVM)
10
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 10 - 40 | € 0,464 | € 4,64 |
| 50 - 90 | € 0,417 | € 4,17 |
| 100 - 240 | € 0,381 | € 3,81 |
| 250 - 990 | € 0,346 | € 3,46 |
| 1000+ | € 0,321 | € 3,21 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
ROHMChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
TSMT-8
Serija
QS8J4
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
84 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.5 W
Maximum Gate Source Voltage
±20 V
Plotis
2.5mm
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+150 °C
Ilgis
3.1mm
Typical Gate Charge @ Vgs
13 nC @ 10 V (N Channel)
Forward Diode Voltage
1.2V
Aukštis
0.8mm
Kilmės šalis
Japan
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products