P-Channel MOSFET, 1 A, 30 V, 6-Pin TSMT ROHM QS6U24TR

RS kodas: 178-5898Gamintojas: ROHMGamintojo kodas: QS6U24TR
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Techniniai dokumentai

Specifikacijos

Markė

ROHM

Channel Type

P

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

30 V

Serija

QS6U24

Pakuotės tipas

TSMT

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

800 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

900 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Plotis

1.8mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3mm

Typical Gate Charge @ Vgs

1.7 nC @ 5 V (N Channel)

Aukštis

0.95mm

Kilmės šalis

Thailand

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€ 0,536

Each (In a Pack of 25) (be PVM)

€ 0,648

Each (In a Pack of 25) (su PVM)

P-Channel MOSFET, 1 A, 30 V, 6-Pin TSMT ROHM QS6U24TR
sticker-462

€ 0,536

Each (In a Pack of 25) (be PVM)

€ 0,648

Each (In a Pack of 25) (su PVM)

P-Channel MOSFET, 1 A, 30 V, 6-Pin TSMT ROHM QS6U24TR
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
25 - 25€ 0,536€ 13,39
50 - 75€ 0,49€ 12,26
100 - 225€ 0,478€ 11,94
250 - 975€ 0,464€ 11,60
1000+€ 0,454€ 11,34

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

ROHM

Channel Type

P

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

30 V

Serija

QS6U24

Pakuotės tipas

TSMT

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

800 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

900 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Plotis

1.8mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3mm

Typical Gate Charge @ Vgs

1.7 nC @ 5 V (N Channel)

Aukštis

0.95mm

Kilmės šalis

Thailand

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more