Dual N-Channel MOSFET, 27 A, 80 A, 30 V, 8-Pin HSOP8 ROHM HP8S36TB

RS kodas: 178-5992Gamintojas: ROHMGamintojo kodas: HP8S36TB
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Techniniai dokumentai

Specifikacijos

Markė

ROHM

Channel Type

N

Maximum Continuous Drain Current

27 A, 80 A

Maximum Drain Source Voltage

30 V

Serija

HP8S36

Pakuotės tipas

HSOP8

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

13.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

22 W, 29 W

Maximum Gate Source Voltage

±128 V, ±20 V

Plotis

5.8mm

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+150 °C

Ilgis

5mm

Typical Gate Charge @ Vgs

4.8 nC @ 4.5 V (N Channel), 47 nC @ 4.5 V (N Channel)

Aukštis

1.1mm

Minimali darbinė temperatūra

-55 °C

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€ 0,61

Each (In a Pack of 10) (be PVM)

€ 0,738

Each (In a Pack of 10) (su PVM)

Dual N-Channel MOSFET, 27 A, 80 A, 30 V, 8-Pin HSOP8 ROHM HP8S36TB
sticker-462

€ 0,61

Each (In a Pack of 10) (be PVM)

€ 0,738

Each (In a Pack of 10) (su PVM)

Dual N-Channel MOSFET, 27 A, 80 A, 30 V, 8-Pin HSOP8 ROHM HP8S36TB
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
10 - 40€ 0,61€ 6,10
50 - 90€ 0,549€ 5,49
100 - 240€ 0,50€ 5,00
250 - 990€ 0,459€ 4,59
1000+€ 0,423€ 4,23

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

ROHM

Channel Type

N

Maximum Continuous Drain Current

27 A, 80 A

Maximum Drain Source Voltage

30 V

Serija

HP8S36

Pakuotės tipas

HSOP8

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

13.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

22 W, 29 W

Maximum Gate Source Voltage

±128 V, ±20 V

Plotis

5.8mm

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+150 °C

Ilgis

5mm

Typical Gate Charge @ Vgs

4.8 nC @ 4.5 V (N Channel), 47 nC @ 4.5 V (N Channel)

Aukštis

1.1mm

Minimali darbinė temperatūra

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more