Dual N/P-Channel MOSFET, 18 A, 15 A, 30 V, 8-Pin HSOP8 ROHM HP8MA2TB1

RS kodas: 178-5964Gamintojas: ROHMGamintojo kodas: HP8MA2TB1
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Techniniai dokumentai

Specifikacijos

Markė

ROHM

Channel Type

N, P

Maximum Continuous Drain Current

18 A, 15 A

Maximum Drain Source Voltage

30 V

Serija

HP8MA2

Pakuotės tipas

HSOP8

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

16.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5 (N Channel) V, 2.5 (P Channel) V

Minimum Gate Threshold Voltage

1 (N Channel) V, 1 (P Channel) V

Maximum Power Dissipation

7 W

Maximum Gate Source Voltage

±20 V, ±20 V

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+150 °C

Ilgis

5mm

Plotis

5.8mm

Typical Gate Charge @ Vgs

22 nC @ 10 V (N Channel), 25 nC @ 10 V (P Channel)

Minimali darbinė temperatūra

-55 °C

Aukštis

1.1mm

Kilmės šalis

Thailand

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€ 1,522

Each (In a Pack of 10) (be PVM)

€ 1,842

Each (In a Pack of 10) (su PVM)

Dual N/P-Channel MOSFET, 18 A, 15 A, 30 V, 8-Pin HSOP8 ROHM HP8MA2TB1
sticker-462

€ 1,522

Each (In a Pack of 10) (be PVM)

€ 1,842

Each (In a Pack of 10) (su PVM)

Dual N/P-Channel MOSFET, 18 A, 15 A, 30 V, 8-Pin HSOP8 ROHM HP8MA2TB1
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
10 - 40€ 1,522€ 15,22
50 - 90€ 1,312€ 13,12
100 - 240€ 0,963€ 9,63
250 - 990€ 0,938€ 9,38
1000+€ 0,915€ 9,15

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

ROHM

Channel Type

N, P

Maximum Continuous Drain Current

18 A, 15 A

Maximum Drain Source Voltage

30 V

Serija

HP8MA2

Pakuotės tipas

HSOP8

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

16.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5 (N Channel) V, 2.5 (P Channel) V

Minimum Gate Threshold Voltage

1 (N Channel) V, 1 (P Channel) V

Maximum Power Dissipation

7 W

Maximum Gate Source Voltage

±20 V, ±20 V

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+150 °C

Ilgis

5mm

Plotis

5.8mm

Typical Gate Charge @ Vgs

22 nC @ 10 V (N Channel), 25 nC @ 10 V (P Channel)

Minimali darbinė temperatūra

-55 °C

Aukštis

1.1mm

Kilmės šalis

Thailand

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more