ROHM Dual SiC N-Channel SiC Power Module, 120 A, 1200 V, 4-Pin C BSM120D12P2C005

RS kodas: 144-2257Gamintojas: ROHMGamintojo kodas: BSM120D12P2C005
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

ROHM

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

1200 V

Serija

BSM

Pakuotės tipas

c

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

4

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

1.6V

Maximum Power Dissipation

935 W

Number of Elements per Chip

2

Plotis

45.6mm

Ilgis

122mm

Transistor Material

SiC

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-40 °C

Aukštis

17mm

Kilmės šalis

Japan

Produkto aprašymas

SiC Power Modules, ROHM

The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

MOSFET Transistors, ROHM Semiconductor

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Sandėlio informacija laikinai nepasiekiama.

€ 475,00

€ 475,00 už 1 vnt. (be PVM)

€ 574,75

€ 574,75 už 1 vnt. (su PVM)

ROHM Dual SiC N-Channel SiC Power Module, 120 A, 1200 V, 4-Pin C BSM120D12P2C005
sticker-462

€ 475,00

€ 475,00 už 1 vnt. (be PVM)

€ 574,75

€ 574,75 už 1 vnt. (su PVM)

ROHM Dual SiC N-Channel SiC Power Module, 120 A, 1200 V, 4-Pin C BSM120D12P2C005
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

ROHM

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

1200 V

Serija

BSM

Pakuotės tipas

c

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

4

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

1.6V

Maximum Power Dissipation

935 W

Number of Elements per Chip

2

Plotis

45.6mm

Ilgis

122mm

Transistor Material

SiC

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-40 °C

Aukštis

17mm

Kilmės šalis

Japan

Produkto aprašymas

SiC Power Modules, ROHM

The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

MOSFET Transistors, ROHM Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more