Renesas Electronics RJH65T47DPQ-A0#T0 IGBT, 90 A 650 V, 3-Pin TO-247A, Through Hole
Techniniai dokumentai
Specifikacijos
Markė
Renesas ElectronicsMaximum Continuous Collector Current
90 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
375 W
Pakuotės tipas
TO-247A
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Single
Matmenys
15.94 x 5.02 x 21.13mm
Gate Capacitance
3000pF
Maksimali darbinė temperatūra
+175 °C
Kilmės šalis
China
Produkto aprašymas
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Patikrinkite dar kartą.
€ 6,615
Each (In a Pack of 2) (be PVM)
€ 8,004
Each (In a Pack of 2) (su PVM)
2
€ 6,615
Each (In a Pack of 2) (be PVM)
€ 8,004
Each (In a Pack of 2) (su PVM)
2
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 2 - 18 | € 6,615 | € 13,23 |
| 20 - 38 | € 5,565 | € 11,13 |
| 40 - 198 | € 5,145 | € 10,29 |
| 200 - 398 | € 4,725 | € 9,45 |
| 400+ | € 4,252 | € 8,50 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
Renesas ElectronicsMaximum Continuous Collector Current
90 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
375 W
Pakuotės tipas
TO-247A
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Single
Matmenys
15.94 x 5.02 x 21.13mm
Gate Capacitance
3000pF
Maksimali darbinė temperatūra
+175 °C
Kilmės šalis
China
Produkto aprašymas
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products