Techniniai dokumentai
Specifikacijos
Spectrums Detected
Infrared
Typical Fall Time
7µs
Typical Rise Time
7µs
Number of Channels
1
Maximum Light Current
7200µA
Maximum Dark Current
200nA
Angle of Half Sensitivity
24 °
Polarity
NPN
Number of Pins
2
Tvirtinimo tipas
Through Hole
Pakuotės tipas
3mm (T-1)
Matmenys
4 x 4 x 5.2mm
Collector Current
15mA
Maximum Wavelength Detected
1120nm
Spectral Range of Sensitivity
730 → 1120 nm
Minimum Wavelength Detected
730nm
Aukštis
5.2mm
Ilgis
4mm
Plotis
4mm
Produkto aprašymas
Phototransistor T-1 (3mm) Package
This family of NPN silicon phototransistors, from OSRAM Opto Semiconductors, are a range of 3mm (T-1) through-hole devices. They have both clear or black plastic lenses, the diffused lenses being used for daylight filters. Suitable applications include; photointerrupters, industrial electronics and for control/drive circuits.
IR Phototransistors, OSRAM Opto Semiconductors
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P.O.A.
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P.O.A.
10
Techniniai dokumentai
Specifikacijos
Spectrums Detected
Infrared
Typical Fall Time
7µs
Typical Rise Time
7µs
Number of Channels
1
Maximum Light Current
7200µA
Maximum Dark Current
200nA
Angle of Half Sensitivity
24 °
Polarity
NPN
Number of Pins
2
Tvirtinimo tipas
Through Hole
Pakuotės tipas
3mm (T-1)
Matmenys
4 x 4 x 5.2mm
Collector Current
15mA
Maximum Wavelength Detected
1120nm
Spectral Range of Sensitivity
730 → 1120 nm
Minimum Wavelength Detected
730nm
Aukštis
5.2mm
Ilgis
4mm
Plotis
4mm
Produkto aprašymas
Phototransistor T-1 (3mm) Package
This family of NPN silicon phototransistors, from OSRAM Opto Semiconductors, are a range of 3mm (T-1) through-hole devices. They have both clear or black plastic lenses, the diffused lenses being used for daylight filters. Suitable applications include; photointerrupters, industrial electronics and for control/drive circuits.