Dual P-Channel MOSFET, 2.5 A, 60 V, 8-Pin SOT-28FL, VEC8 onsemi VEC2315-TL-W

RS kodas: 121-7891Gamintojas: onsemiGamintojo kodas: VEC2315-TL-W
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

P

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOT-28FL, VEC8

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

194 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

1 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

11 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Plotis

2.3mm

Ilgis

2.9mm

Number of Elements per Chip

2

Forward Diode Voltage

1.2V

Aukštis

0.73mm

Kilmės šalis

China

Produkto aprašymas

Dual P-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Sandėlio informacija laikinai nepasiekiama.

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€ 0,701

Each (In a Pack of 10) (be PVM)

€ 0,848

Each (In a Pack of 10) (su PVM)

Dual P-Channel MOSFET, 2.5 A, 60 V, 8-Pin SOT-28FL, VEC8 onsemi VEC2315-TL-W
Pasirinkite pakuotės tipą
sticker-462

€ 0,701

Each (In a Pack of 10) (be PVM)

€ 0,848

Each (In a Pack of 10) (su PVM)

Dual P-Channel MOSFET, 2.5 A, 60 V, 8-Pin SOT-28FL, VEC8 onsemi VEC2315-TL-W
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

P

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOT-28FL, VEC8

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

194 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

1 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

11 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Plotis

2.3mm

Ilgis

2.9mm

Number of Elements per Chip

2

Forward Diode Voltage

1.2V

Aukštis

0.73mm

Kilmės šalis

China

Produkto aprašymas

Dual P-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more