onsemi TF414G N-Channel JFET, 40 V, Idss 0.05 to 0.13mA, 3-Pin SOT-883

RS kodas: 163-0320Gamintojas: onsemiGamintojo kodas: TF414T5G
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

0.05 to 0.13mA

Maximum Drain Source Voltage

40 V

Maximum Drain Gate Voltage

-40V

Transistor Configuration

Single

Configuration

Single

Tvirtinimo tipas

Surface Mount

Pakuotės tipas

SOT-883

Kaiščių skaičius

3

Drain Gate On-Capacitance

0.7pF

Source Gate On-Capacitance

0.3pF

Matmenys

1.07 x 0.67 x 0.41mm

Aukštis

0.41mm

Plotis

0.67mm

Maximum Power Dissipation

100 mW

Maksimali darbinė temperatūra

+150 °C

Ilgis

1.07mm

Kilmės šalis

Malaysia

Produkto aprašymas

N-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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€ 0,025

Each (On a Reel of 8000) (be PVM)

€ 0,03

Each (On a Reel of 8000) (su PVM)

onsemi TF414G N-Channel JFET, 40 V, Idss 0.05 to 0.13mA, 3-Pin SOT-883
sticker-462

€ 0,025

Each (On a Reel of 8000) (be PVM)

€ 0,03

Each (On a Reel of 8000) (su PVM)

onsemi TF414G N-Channel JFET, 40 V, Idss 0.05 to 0.13mA, 3-Pin SOT-883
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

0.05 to 0.13mA

Maximum Drain Source Voltage

40 V

Maximum Drain Gate Voltage

-40V

Transistor Configuration

Single

Configuration

Single

Tvirtinimo tipas

Surface Mount

Pakuotės tipas

SOT-883

Kaiščių skaičius

3

Drain Gate On-Capacitance

0.7pF

Source Gate On-Capacitance

0.3pF

Matmenys

1.07 x 0.67 x 0.41mm

Aukštis

0.41mm

Plotis

0.67mm

Maximum Power Dissipation

100 mW

Maksimali darbinė temperatūra

+150 °C

Ilgis

1.07mm

Kilmės šalis

Malaysia

Produkto aprašymas

N-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more