P-Channel MOSFET, 100 A, 75 V, 3-Pin D2PAK onsemi SMP3003-DL-1E

RS kodas: 124-5430Gamintojas: onsemiGamintojo kodas: SMP3003-DL-1E
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

P

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

75 V

Pakuotės tipas

D2PAK (TO-263)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

11 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Maximum Power Dissipation

90 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

9.2mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

10mm

Typical Gate Charge @ Vgs

280 nC @ 10 V

Aukštis

4.5mm

Kilmės šalis

Korea, Republic Of

Produkto aprašymas

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 4,41

Each (On a Reel of 800) (be PVM)

€ 5,336

Each (On a Reel of 800) (su PVM)

P-Channel MOSFET, 100 A, 75 V, 3-Pin D2PAK onsemi SMP3003-DL-1E
sticker-462

€ 4,41

Each (On a Reel of 800) (be PVM)

€ 5,336

Each (On a Reel of 800) (su PVM)

P-Channel MOSFET, 100 A, 75 V, 3-Pin D2PAK onsemi SMP3003-DL-1E
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Ritė
800 - 3200€ 4,41€ 3 528,00
4000+€ 4,305€ 3 444,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

P

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

75 V

Pakuotės tipas

D2PAK (TO-263)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

11 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Maximum Power Dissipation

90 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

9.2mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

10mm

Typical Gate Charge @ Vgs

280 nC @ 10 V

Aukštis

4.5mm

Kilmės šalis

Korea, Republic Of

Produkto aprašymas

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more