Techniniai dokumentai
Specifikacijos
Markė
onsemiMaximum Continuous Collector Current
23 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
100 W
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Switching Speed
1MHz
Transistor Configuration
Single
Matmenys
10.67 x 4.83 x 16.51mm
Minimali darbinė temperatūra
-55 °C
Maksimali darbinė temperatūra
+150 °C
Produkto aprašymas
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Patikrinkite dar kartą.
€ 2,835
Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 3,43
Už kiekviena vnt. (tiekiama tuboje) (su PVM)
5
€ 2,835
Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 3,43
Už kiekviena vnt. (tiekiama tuboje) (su PVM)
5
Pirkti dideliais kiekiais
kiekis | Vieneto kaina | Per Vamzdelis |
---|---|---|
5 - 20 | € 2,835 | € 14,18 |
25 - 45 | € 2,52 | € 12,60 |
50 - 120 | € 2,415 | € 12,08 |
125 - 245 | € 2,205 | € 11,02 |
250+ | € 1,995 | € 9,98 |
Techniniai dokumentai
Specifikacijos
Markė
onsemiMaximum Continuous Collector Current
23 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
100 W
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Switching Speed
1MHz
Transistor Configuration
Single
Matmenys
10.67 x 4.83 x 16.51mm
Minimali darbinė temperatūra
-55 °C
Maksimali darbinė temperatūra
+150 °C
Produkto aprašymas
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.