N-Channel MOSFET, 2.5 A, 30 V, 3-Pin SOT-23 onsemi NVTR4503NTG

RS kodas: 124-5419Gamintojas: onsemiGamintojo kodas: NVTR4503NT1G
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

140 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

730 mW

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

1.4mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

3.04mm

Typical Gate Charge @ Vgs

3.6 nC @ 10 V

Aukštis

1.01mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Produkto aprašymas

N-Channel Power MOSFET, 30V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 0,085

Each (On a Reel of 3000) (be PVM)

€ 0,103

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 2.5 A, 30 V, 3-Pin SOT-23 onsemi NVTR4503NTG
sticker-462

€ 0,085

Each (On a Reel of 3000) (be PVM)

€ 0,103

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 2.5 A, 30 V, 3-Pin SOT-23 onsemi NVTR4503NTG
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

140 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

730 mW

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

1.4mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

3.04mm

Typical Gate Charge @ Vgs

3.6 nC @ 10 V

Aukštis

1.01mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Produkto aprašymas

N-Channel Power MOSFET, 30V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more