N-Channel MOSFET, 109 A, 60 V, 8-Pin WDFN onsemi NVTFS5C658NLTAG

RS kodas: 141-2086Gamintojas: onsemiGamintojo kodas: NVTFS5C658NLTAG
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

109 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

WDFN

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

7.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

114 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Plotis

3.15mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

3.15mm

Typical Gate Charge @ Vgs

27 nC @ 10 V

Aukštis

0.75mm

Serija

NVTFS5C658NL

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Produkto aprašymas

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 0,807

Each (On a Reel of 1500) (be PVM)

€ 0,977

Each (On a Reel of 1500) (su PVM)

N-Channel MOSFET, 109 A, 60 V, 8-Pin WDFN onsemi NVTFS5C658NLTAG
sticker-462

€ 0,807

Each (On a Reel of 1500) (be PVM)

€ 0,977

Each (On a Reel of 1500) (su PVM)

N-Channel MOSFET, 109 A, 60 V, 8-Pin WDFN onsemi NVTFS5C658NLTAG
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

109 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

WDFN

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

7.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

114 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Plotis

3.15mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

3.15mm

Typical Gate Charge @ Vgs

27 nC @ 10 V

Aukštis

0.75mm

Serija

NVTFS5C658NL

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Produkto aprašymas

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more