N-Channel MOSFET, 21 A, 60 V, 4-Pin LFPAK, SOT-669 onsemi NVMYS025N06CLTWGOS

RS kodas: 195-2551Gamintojas: onsemiGamintojo kodas: NVMYS025N06CLTWG
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

21 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

LFPAK, SOT-669

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

4

Maximum Drain Source Resistance

43 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

24 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Plotis

4.25mm

Ilgis

5mm

Typical Gate Charge @ Vgs

5.8 @ 10 V nC

Maksimali darbinė temperatūra

+175 °C

Minimali darbinė temperatūra

-55 °C

Aukštis

1.15mm

Automotive Standard

AEC-Q101

Forward Diode Voltage

1.2V

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Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Sandėlio informacija laikinai nepasiekiama.

€ 0,388

Each (On a Reel of 3000) (be PVM)

€ 0,47

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 21 A, 60 V, 4-Pin LFPAK, SOT-669 onsemi NVMYS025N06CLTWGOS

3000

Galima įsigyti kartotiną kiekį 3000
3000€ 1 165,50
6000€ 2 331,00
9000€ 3 496,50
12000€ 4 662,00
15000€ 5 827,50
18000€ 6 993,00
21000€ 8 158,50
24000€ 9 324,00
27000€ 10 489,50
30000€ 11 655,00
33000€ 12 820,50
36000€ 13 986,00
39000€ 15 151,50
42000€ 16 317,00
45000€ 17 482,50
sticker-462

€ 0,388

Each (On a Reel of 3000) (be PVM)

€ 0,47

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 21 A, 60 V, 4-Pin LFPAK, SOT-669 onsemi NVMYS025N06CLTWGOS
Sandėlio informacija laikinai nepasiekiama.

3000

Galima įsigyti kartotiną kiekį 3000
3000€ 1 165,50
6000€ 2 331,00
9000€ 3 496,50
12000€ 4 662,00
15000€ 5 827,50
18000€ 6 993,00
21000€ 8 158,50
24000€ 9 324,00
27000€ 10 489,50
30000€ 11 655,00
33000€ 12 820,50
36000€ 13 986,00
39000€ 15 151,50
42000€ 16 317,00
45000€ 17 482,50
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

21 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

LFPAK, SOT-669

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

4

Maximum Drain Source Resistance

43 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

24 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Plotis

4.25mm

Ilgis

5mm

Typical Gate Charge @ Vgs

5.8 @ 10 V nC

Maksimali darbinė temperatūra

+175 °C

Minimali darbinė temperatūra

-55 °C

Aukštis

1.15mm

Automotive Standard

AEC-Q101

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more