N-Channel MOSFET, 123 A, 80 V, 5-Pin DFN onsemi NVMFS6H818NWFT1G

RS kodas: 172-3294Gamintojas: onsemiGamintojo kodas: NVMFS6H818NWFT1G
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

123 A

Maximum Drain Source Voltage

80 V

Serija

NVMFS6H818N

Pakuotės tipas

DFN

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

5

Maximum Drain Source Resistance

3.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

136 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Plotis

5.1mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

6.1mm

Typical Gate Charge @ Vgs

46 nC @ 10 V

Aukštis

1.05mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

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Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Sandėlio informacija laikinai nepasiekiama.

€ 1,035

Each (On a Reel of 1500) (be PVM)

€ 1,252

Each (On a Reel of 1500) (su PVM)

N-Channel MOSFET, 123 A, 80 V, 5-Pin DFN onsemi NVMFS6H818NWFT1G

1500

Galima įsigyti kartotiną kiekį 1500
1500€ 1 552,95
3000€ 3 105,90
4500€ 4 658,85
6000€ 6 211,80
7500€ 7 764,75
9000€ 9 317,70
10500€ 10 870,65
12000€ 12 423,60
13500€ 13 976,55
15000€ 15 529,50
16500€ 17 082,45
18000€ 18 635,40
19500€ 20 188,35
21000€ 21 741,30
22500€ 23 294,25
sticker-462

€ 1,035

Each (On a Reel of 1500) (be PVM)

€ 1,252

Each (On a Reel of 1500) (su PVM)

N-Channel MOSFET, 123 A, 80 V, 5-Pin DFN onsemi NVMFS6H818NWFT1G
Sandėlio informacija laikinai nepasiekiama.

1500

Galima įsigyti kartotiną kiekį 1500
1500€ 1 552,95
3000€ 3 105,90
4500€ 4 658,85
6000€ 6 211,80
7500€ 7 764,75
9000€ 9 317,70
10500€ 10 870,65
12000€ 12 423,60
13500€ 13 976,55
15000€ 15 529,50
16500€ 17 082,45
18000€ 18 635,40
19500€ 20 188,35
21000€ 21 741,30
22500€ 23 294,25
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

123 A

Maximum Drain Source Voltage

80 V

Serija

NVMFS6H818N

Pakuotės tipas

DFN

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

5

Maximum Drain Source Resistance

3.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

136 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Plotis

5.1mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

6.1mm

Typical Gate Charge @ Vgs

46 nC @ 10 V

Aukštis

1.05mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more