P-Channel MOSFET, 100 A, 60 V, 5-Pin DFN onsemi NVMFS5A160PLZWFT1G

RS kodas: 178-4397Gamintojas: onsemiGamintojo kodas: NVMFS5A160PLZWFT1G
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

P

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

DFN

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

5

Maximum Drain Source Resistance

7.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maksimali darbinė temperatūra

+175 °C

Ilgis

5.1mm

Number of Elements per Chip

1

Plotis

6.1mm

Typical Gate Charge @ Vgs

160 nC @ 10 V

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.5V

Aukštis

1.05mm

Kilmės šalis

Malaysia

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€ 2,468

Each (On a Reel of 1500) (be PVM)

€ 2,986

Each (On a Reel of 1500) (su PVM)

P-Channel MOSFET, 100 A, 60 V, 5-Pin DFN onsemi NVMFS5A160PLZWFT1G
sticker-462

€ 2,468

Each (On a Reel of 1500) (be PVM)

€ 2,986

Each (On a Reel of 1500) (su PVM)

P-Channel MOSFET, 100 A, 60 V, 5-Pin DFN onsemi NVMFS5A160PLZWFT1G
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Ritė
1500 - 6000€ 2,468€ 3 701,25
7500+€ 2,415€ 3 622,50

Ideate. Create. Collaborate

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

P

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

DFN

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

5

Maximum Drain Source Resistance

7.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maksimali darbinė temperatūra

+175 °C

Ilgis

5.1mm

Number of Elements per Chip

1

Plotis

6.1mm

Typical Gate Charge @ Vgs

160 nC @ 10 V

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.5V

Aukštis

1.05mm

Kilmės šalis

Malaysia

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more