onsemi NVMFS4C310N N-Channel MOSFET, 51 A, 30 V, 6-Pin DFN NVMFS4C310NT1G
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N
Maximum Continuous Drain Current
51 A
Maximum Drain Source Voltage
30 V
Serija
NVMFS4C310N
Pakuotės tipas
DFN
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
32 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Plotis
5.1mm
Ilgis
6.1mm
Typical Gate Charge @ Vgs
9.7 nC @ 4.5 V
Maksimali darbinė temperatūra
+175 °C
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.1V
Aukštis
1.05mm
Automotive Standard
AEC-Q101
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 54,62
€ 1,092 Each (In a Pack of 50) (be PVM)
€ 66,09
€ 1,321 Each (In a Pack of 50) (su PVM)
Standartas
50
€ 54,62
€ 1,092 Each (In a Pack of 50) (be PVM)
€ 66,09
€ 1,321 Each (In a Pack of 50) (su PVM)
Standartas
50
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 50 - 450 | € 1,092 | € 54,62 |
| 500 - 950 | € 0,936 | € 46,79 |
| 1000+ | € 0,811 | € 40,56 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N
Maximum Continuous Drain Current
51 A
Maximum Drain Source Voltage
30 V
Serija
NVMFS4C310N
Pakuotės tipas
DFN
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
32 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Plotis
5.1mm
Ilgis
6.1mm
Typical Gate Charge @ Vgs
9.7 nC @ 4.5 V
Maksimali darbinė temperatūra
+175 °C
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.1V
Aukštis
1.05mm
Automotive Standard
AEC-Q101
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products