Dual N-Channel MOSFET, 540 mA, 20 V, 6-Pin SOT-563 onsemi NTZD3154NT1G

RS kodas: 184-1071Gamintojas: onsemiGamintojo kodas: NTZD3154NT1G
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

540 mA

Maximum Drain Source Voltage

20 V

Pakuotės tipas

SOT-563

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

900 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.45V

Maximum Power Dissipation

250 mW

Maximum Gate Source Voltage

±7 V

Plotis

1.3mm

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+150 °C

Ilgis

1.7mm

Typical Gate Charge @ Vgs

1.5 nC @ 4.5 V

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Aukštis

0.6mm

Kilmės šalis

China

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€ 0,094

Each (On a Reel of 4000) (be PVM)

€ 0,114

Each (On a Reel of 4000) (su PVM)

Dual N-Channel MOSFET, 540 mA, 20 V, 6-Pin SOT-563 onsemi NTZD3154NT1G
sticker-462

€ 0,094

Each (On a Reel of 4000) (be PVM)

€ 0,114

Each (On a Reel of 4000) (su PVM)

Dual N-Channel MOSFET, 540 mA, 20 V, 6-Pin SOT-563 onsemi NTZD3154NT1G
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

540 mA

Maximum Drain Source Voltage

20 V

Pakuotės tipas

SOT-563

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

900 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.45V

Maximum Power Dissipation

250 mW

Maximum Gate Source Voltage

±7 V

Plotis

1.3mm

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+150 °C

Ilgis

1.7mm

Typical Gate Charge @ Vgs

1.5 nC @ 4.5 V

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Aukštis

0.6mm

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more