Dual P-Channel MOSFET, 430 mA, 20 V, 6-Pin SOT-563 onsemi NTZD3152PT1G

RS kodas: 163-1144Gamintojas: onsemiGamintojo kodas: NTZD3152PT1G
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

P

Maximum Continuous Drain Current

430 mA

Maximum Drain Source Voltage

20 V

Pakuotės tipas

SOT-563

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

280 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-6 V, +6 V

Plotis

1.3mm

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

1.7mm

Typical Gate Charge @ Vgs

1.7 nC @ 4.5 V

Aukštis

0.6mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

Malaysia

Produkto aprašymas

Dual P-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 0,083

Each (On a Reel of 4000) (be PVM)

€ 0,10

Each (On a Reel of 4000) (su PVM)

Dual P-Channel MOSFET, 430 mA, 20 V, 6-Pin SOT-563 onsemi NTZD3152PT1G
sticker-462

€ 0,083

Each (On a Reel of 4000) (be PVM)

€ 0,10

Each (On a Reel of 4000) (su PVM)

Dual P-Channel MOSFET, 430 mA, 20 V, 6-Pin SOT-563 onsemi NTZD3152PT1G
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

P

Maximum Continuous Drain Current

430 mA

Maximum Drain Source Voltage

20 V

Pakuotės tipas

SOT-563

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

280 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-6 V, +6 V

Plotis

1.3mm

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

1.7mm

Typical Gate Charge @ Vgs

1.7 nC @ 4.5 V

Aukštis

0.6mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

Malaysia

Produkto aprašymas

Dual P-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more