N-Channel MOSFET, 260 mA, 60 V, 3-Pin SOT-23 onsemi NTR5103NT1G

RS kodas: 184-1068Gamintojas: onsemiGamintojo kodas: NTR5103NT1G
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

260 mA

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Minimum Gate Threshold Voltage

1.9V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Plotis

1.4mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.04mm

Typical Gate Charge @ Vgs

0.81 nC @ 5 V

Aukštis

1.01mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Kilmės šalis

China

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€ 0,039

Each (On a Reel of 3000) (be PVM)

€ 0,047

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 260 mA, 60 V, 3-Pin SOT-23 onsemi NTR5103NT1G
sticker-462

€ 0,039

Each (On a Reel of 3000) (be PVM)

€ 0,047

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 260 mA, 60 V, 3-Pin SOT-23 onsemi NTR5103NT1G
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Ritė
3000 - 6000€ 0,039€ 116,55
9000 - 21000€ 0,033€ 97,65
24000 - 42000€ 0,028€ 85,05
45000 - 96000€ 0,026€ 78,75
99000+€ 0,024€ 72,45

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

260 mA

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Minimum Gate Threshold Voltage

1.9V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Plotis

1.4mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.04mm

Typical Gate Charge @ Vgs

0.81 nC @ 5 V

Aukštis

1.01mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more