N-Channel MOSFET, 3.2 A, 20 V, 3-Pin SOT-23 onsemi NTR4501NT1G

RS kodas: 688-9146Gamintojas: onsemiGamintojo kodas: NTR4501NT1G
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

3.2 A

Maximum Drain Source Voltage

20 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

2.4 nC @ 4.5 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.9mm

Plotis

1.3mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

0.94mm

Produkto aprašymas

N-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Patikrinkite dar kartą.

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€ 0,442

Each (In a Pack of 2) (be PVM)

€ 0,535

Each (In a Pack of 2) (su PVM)

N-Channel MOSFET, 3.2 A, 20 V, 3-Pin SOT-23 onsemi NTR4501NT1G
Pasirinkite pakuotės tipą
sticker-462

€ 0,442

Each (In a Pack of 2) (be PVM)

€ 0,535

Each (In a Pack of 2) (su PVM)

N-Channel MOSFET, 3.2 A, 20 V, 3-Pin SOT-23 onsemi NTR4501NT1G
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
2 - 58€ 0,442€ 0,88
60 - 118€ 0,416€ 0,83
120 - 198€ 0,355€ 0,71
200 - 498€ 0,335€ 0,67
500+€ 0,322€ 0,64

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

3.2 A

Maximum Drain Source Voltage

20 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

2.4 nC @ 4.5 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.9mm

Plotis

1.3mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

0.94mm

Produkto aprašymas

N-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more