P-Channel MOSFET, 3.5 A, 30 V, 3-Pin SOT-23 onsemi NTR4171PG

RS kodas: 780-4749Gamintojas: onsemiGamintojo kodas: NTR4171PT1G
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

P

Maximum Continuous Drain Current

3.5 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Transistor Material

Si

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.04mm

Typical Gate Charge @ Vgs

15.6 nC @ 10 V, 7.4 nC @ 4.5 V

Plotis

1.4mm

Minimali darbinė temperatūra

-55 °C

Aukštis

1.01mm

Produkto aprašymas

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 0,379

Each (In a Pack of 25) (be PVM)

€ 0,459

Each (In a Pack of 25) (su PVM)

P-Channel MOSFET, 3.5 A, 30 V, 3-Pin SOT-23 onsemi NTR4171PG
Pasirinkite pakuotės tipą
sticker-462

€ 0,379

Each (In a Pack of 25) (be PVM)

€ 0,459

Each (In a Pack of 25) (su PVM)

P-Channel MOSFET, 3.5 A, 30 V, 3-Pin SOT-23 onsemi NTR4171PG
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
25 - 25€ 0,379€ 9,48
50 - 100€ 0,37€ 9,24
125 - 225€ 0,359€ 8,98
250 - 475€ 0,352€ 8,79
500+€ 0,34€ 8,50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

P

Maximum Continuous Drain Current

3.5 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Transistor Material

Si

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.04mm

Typical Gate Charge @ Vgs

15.6 nC @ 10 V, 7.4 nC @ 4.5 V

Plotis

1.4mm

Minimali darbinė temperatūra

-55 °C

Aukštis

1.01mm

Produkto aprašymas

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more