N-Channel MOSFET, 2.4 A, 30 V, 3-Pin SOT-23 onsemi NTR4170NT1G

RS kodas: 184-1067Gamintojas: onsemiGamintojo kodas: NTR4170NT1G
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

2.4 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

480 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.04mm

Typical Gate Charge @ Vgs

4.76 nC @ 4.5 V

Plotis

1.4mm

Number of Elements per Chip

1

Forward Diode Voltage

1V

Aukštis

1.01mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

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€ 0,127

Each (On a Reel of 3000) (be PVM)

€ 0,154

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 2.4 A, 30 V, 3-Pin SOT-23 onsemi NTR4170NT1G
sticker-462

€ 0,127

Each (On a Reel of 3000) (be PVM)

€ 0,154

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 2.4 A, 30 V, 3-Pin SOT-23 onsemi NTR4170NT1G
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

2.4 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

480 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.04mm

Typical Gate Charge @ Vgs

4.76 nC @ 4.5 V

Plotis

1.4mm

Number of Elements per Chip

1

Forward Diode Voltage

1V

Aukštis

1.01mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more