P-Channel MOSFET, 1 A, 20 V, 3-Pin SOT-23 onsemi NTR1P02G

RS kodas: 688-9143Gamintojas: onsemiGamintojo kodas: NTR1P02T1G
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

P

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

20 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Maximum Power Dissipation

400 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

1.3mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

2.9mm

Typical Gate Charge @ Vgs

2.5 nC @ 5 V

Minimali darbinė temperatūra

-55 °C

Aukštis

0.94mm

Produkto aprašymas

P-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Patikrinkite dar kartą.

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€ 0,376

Each (In a Pack of 2) (be PVM)

€ 0,455

Each (In a Pack of 2) (su PVM)

P-Channel MOSFET, 1 A, 20 V, 3-Pin SOT-23 onsemi NTR1P02G
Pasirinkite pakuotės tipą
sticker-462

€ 0,376

Each (In a Pack of 2) (be PVM)

€ 0,455

Each (In a Pack of 2) (su PVM)

P-Channel MOSFET, 1 A, 20 V, 3-Pin SOT-23 onsemi NTR1P02G
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
2 - 98€ 0,376€ 0,75
100 - 198€ 0,362€ 0,72
200 - 498€ 0,295€ 0,59
500 - 998€ 0,281€ 0,56
1000+€ 0,261€ 0,52

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

P

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

20 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Maximum Power Dissipation

400 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

1.3mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

2.9mm

Typical Gate Charge @ Vgs

2.5 nC @ 5 V

Minimali darbinė temperatūra

-55 °C

Aukštis

0.94mm

Produkto aprašymas

P-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more