Techniniai dokumentai
Specifikacijos
Markė
ON SemiconductorChannel Type
P
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
20 V
Pakuotės tipas
SOT-23
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
220 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
400 mW
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
5.5 nC @ 4 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
2.9mm
Plotis
1.3mm
Minimali darbinė temperatūra
-55 °C
Aukštis
0.94mm
Produkto aprašymas
MOSFETs - P-Channel
The Metal–Oxide–Semiconductor Field-Effect Transistor or MOSFET is a transistor used for amplifying or switching electronic signals.A voltage on the oxide-insulated Gate electrode can induce a conducting channel between the two other contacts called Source and Drain. The channel can be of N-type or P-type.
P.O.A.
Each (In a Pack of 2) (be PVM)
2

P.O.A.
Each (In a Pack of 2) (be PVM)
2

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Techniniai dokumentai
Specifikacijos
Markė
ON SemiconductorChannel Type
P
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
20 V
Pakuotės tipas
SOT-23
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
220 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
400 mW
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
5.5 nC @ 4 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
2.9mm
Plotis
1.3mm
Minimali darbinė temperatūra
-55 °C
Aukštis
0.94mm
Produkto aprašymas
MOSFETs - P-Channel
The Metal–Oxide–Semiconductor Field-Effect Transistor or MOSFET is a transistor used for amplifying or switching electronic signals.A voltage on the oxide-insulated Gate electrode can induce a conducting channel between the two other contacts called Source and Drain. The channel can be of N-type or P-type.