P-Channel MOSFET, 12 A, 60 V, 3-Pin TO-220 onsemi NTP2955G

RS kodas: 780-4736Gamintojas: onsemiGamintojo kodas: NTP2955G
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

P

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

TO-220

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

196 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

62.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.28mm

Typical Gate Charge @ Vgs

14 nC @ 10 V

Plotis

4.82mm

Transistor Material

Si

Number of Elements per Chip

1

Aukštis

9.28mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 0,934

Each (In a Pack of 5) (be PVM)

€ 1,13

Each (In a Pack of 5) (su PVM)

P-Channel MOSFET, 12 A, 60 V, 3-Pin TO-220 onsemi NTP2955G
Pasirinkite pakuotės tipą
sticker-462

€ 0,934

Each (In a Pack of 5) (be PVM)

€ 1,13

Each (In a Pack of 5) (su PVM)

P-Channel MOSFET, 12 A, 60 V, 3-Pin TO-220 onsemi NTP2955G
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
5 - 5€ 0,934€ 4,67
10 - 95€ 0,793€ 3,97
100 - 245€ 0,598€ 2,99
250 - 495€ 0,588€ 2,94
500+€ 0,507€ 2,54

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

P

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

TO-220

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

196 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

62.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.28mm

Typical Gate Charge @ Vgs

14 nC @ 10 V

Plotis

4.82mm

Transistor Material

Si

Number of Elements per Chip

1

Aukštis

9.28mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more