N-Channel MOSFET, 52 A, 40 V, 4-Pin LFPAK, SOT-669 onsemi NTMYS7D3N04CLTWG

RS kodas: 195-2524Gamintojas: onsemiGamintojo kodas: NTMYS7D3N04CLTWG
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

52 A

Maximum Drain Source Voltage

40 V

Pakuotės tipas

LFPAK, SOT-669

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

4

Maximum Drain Source Resistance

12 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

38 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Ilgis

5mm

Typical Gate Charge @ Vgs

7 nC @ 4.5 V

Plotis

4.25mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Aukštis

1.15mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

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€ 1,47

Each (On a Reel of 3000) (be PVM)

€ 1,779

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 52 A, 40 V, 4-Pin LFPAK, SOT-669 onsemi NTMYS7D3N04CLTWG
sticker-462

€ 1,47

Each (On a Reel of 3000) (be PVM)

€ 1,779

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 52 A, 40 V, 4-Pin LFPAK, SOT-669 onsemi NTMYS7D3N04CLTWG
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

52 A

Maximum Drain Source Voltage

40 V

Pakuotės tipas

LFPAK, SOT-669

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

4

Maximum Drain Source Resistance

12 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

38 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Ilgis

5mm

Typical Gate Charge @ Vgs

7 nC @ 4.5 V

Plotis

4.25mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Aukštis

1.15mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more