onsemi N-Channel MOSFET, 330 A, 40 V, 8-Pin LFPAK8 NTMJS0D9N04CLTWG

RS kodas: 189-0485Gamintojas: onsemiGamintojo kodas: NTMJS0D9N04CLTWG
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

330 A

Maximum Drain Source Voltage

40 V

Pakuotės tipas

LFPAK8

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

1.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

167 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Plotis

4.9mm

Ilgis

5mm

Typical Gate Charge @ Vgs

143 nC @ 10 V

Maksimali darbinė temperatūra

+175 °C

Forward Diode Voltage

1.2V

Aukštis

1.2mm

Minimali darbinė temperatūra

-55 °C

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Sandėlio informacija laikinai nepasiekiama.

€ 12,59

€ 2,518 Each (In a Pack of 5) (be PVM)

€ 15,23

€ 3,047 Each (In a Pack of 5) (su PVM)

onsemi N-Channel MOSFET, 330 A, 40 V, 8-Pin LFPAK8 NTMJS0D9N04CLTWG
Pasirinkite pakuotės tipą
sticker-462

€ 12,59

€ 2,518 Each (In a Pack of 5) (be PVM)

€ 15,23

€ 3,047 Each (In a Pack of 5) (su PVM)

onsemi N-Channel MOSFET, 330 A, 40 V, 8-Pin LFPAK8 NTMJS0D9N04CLTWG
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

kiekisVieneto kainaPer Pakuotė
5 - 45€ 2,518€ 12,59
50 - 95€ 2,185€ 10,92
100+€ 1,852€ 9,26

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

330 A

Maximum Drain Source Voltage

40 V

Pakuotės tipas

LFPAK8

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

1.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

167 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Plotis

4.9mm

Ilgis

5mm

Typical Gate Charge @ Vgs

143 nC @ 10 V

Maksimali darbinė temperatūra

+175 °C

Forward Diode Voltage

1.2V

Aukštis

1.2mm

Minimali darbinė temperatūra

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more