Dual N-Channel MOSFET, 2.5 A, 30 V, 6-Pin WDFN onsemi NTLJD4116NTG

RS kodas: 124-5405Gamintojas: onsemiGamintojo kodas: NTLJD4116NT1G
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

WDFN

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.3 W

Maximum Gate Source Voltage

-8 V, +8 V

Plotis

2mm

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

2mm

Typical Gate Charge @ Vgs

5.4 nC @ 4.5 V

Aukštis

0.75mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

Malaysia

Produkto aprašymas

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 0,368

Each (On a Reel of 3000) (be PVM)

€ 0,445

Each (On a Reel of 3000) (su PVM)

Dual N-Channel MOSFET, 2.5 A, 30 V, 6-Pin WDFN onsemi NTLJD4116NTG
sticker-462

€ 0,368

Each (On a Reel of 3000) (be PVM)

€ 0,445

Each (On a Reel of 3000) (su PVM)

Dual N-Channel MOSFET, 2.5 A, 30 V, 6-Pin WDFN onsemi NTLJD4116NTG
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

WDFN

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.3 W

Maximum Gate Source Voltage

-8 V, +8 V

Plotis

2mm

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

2mm

Typical Gate Charge @ Vgs

5.4 nC @ 4.5 V

Aukštis

0.75mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

Malaysia

Produkto aprašymas

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more