Dual N/P-Channel-Channel MOSFET, 4.1 A, 4.6 A, 20 V, 6-Pin WDFN onsemi NTLJD3119CTBG
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N, P
Maximum Continuous Drain Current
4.1 A, 4.6 A
Maximum Drain Source Voltage
20 V
Pakuotės tipas
WDFN
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
120 mΩ, 200 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.3 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+150 °C
Ilgis
2mm
Typical Gate Charge @ Vgs
3.7 nC @ 4.5 V, 5.5 nC @ 4.5 V
Plotis
2mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
0.75mm
Produkto aprašymas
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 0,763
Each (In a Pack of 10) (be PVM)
€ 0,923
Each (In a Pack of 10) (su PVM)
10
€ 0,763
Each (In a Pack of 10) (be PVM)
€ 0,923
Each (In a Pack of 10) (su PVM)
10
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 10 - 90 | € 0,763 | € 7,63 |
| 100 - 490 | € 0,537 | € 5,37 |
| 500 - 990 | € 0,465 | € 4,65 |
| 1000 - 2990 | € 0,396 | € 3,96 |
| 3000+ | € 0,372 | € 3,72 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N, P
Maximum Continuous Drain Current
4.1 A, 4.6 A
Maximum Drain Source Voltage
20 V
Pakuotės tipas
WDFN
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
120 mΩ, 200 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.3 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+150 °C
Ilgis
2mm
Typical Gate Charge @ Vgs
3.7 nC @ 4.5 V, 5.5 nC @ 4.5 V
Plotis
2mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
0.75mm
Produkto aprašymas
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products