Dual N/P-Channel-Channel MOSFET, 250 mA, 880 mA, 20 V, 30 V, 6-Pin SOT-363 onsemi NTJD4158CG
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N, P
Maximum Continuous Drain Current
250 mA, 880 mA
Maximum Drain Source Voltage
20 V, 30 V
Pakuotės tipas
SOT-363
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
2.5 Ω, 500 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
270 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, -12 V, +12 V, +20 V
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+150 °C
Ilgis
2.2mm
Typical Gate Charge @ Vgs
0.9 nC @ 5 V, 2.2 nC @ 4.5 V
Plotis
1.35mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
1mm
Produkto aprašymas
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.
MOSFET Transistors, ON Semiconductor
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Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 0,374
Už kiekviena vnt. (tiekiama juostoje) (be PVM)
€ 0,452
Už kiekviena vnt. (tiekiama juostoje) (su PVM)
25
€ 0,374
Už kiekviena vnt. (tiekiama juostoje) (be PVM)
€ 0,452
Už kiekviena vnt. (tiekiama juostoje) (su PVM)
25
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Juosta |
|---|---|---|
| 25 - 100 | € 0,374 | € 9,34 |
| 125 - 225 | € 0,355 | € 8,87 |
| 250 - 600 | € 0,337 | € 8,43 |
| 625 - 1225 | € 0,319 | € 7,98 |
| 1250+ | € 0,308 | € 7,69 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N, P
Maximum Continuous Drain Current
250 mA, 880 mA
Maximum Drain Source Voltage
20 V, 30 V
Pakuotės tipas
SOT-363
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
2.5 Ω, 500 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
270 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, -12 V, +12 V, +20 V
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+150 °C
Ilgis
2.2mm
Typical Gate Charge @ Vgs
0.9 nC @ 5 V, 2.2 nC @ 4.5 V
Plotis
1.35mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
1mm
Produkto aprašymas
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products