N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-247 onsemi NTHL082N65S3F
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
650 V
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
313 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Plotis
4.82mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
15.87mm
Typical Gate Charge @ Vgs
81 nC @ 10 V
Aukštis
20.82mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.3V
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 10,71
Each (In a Pack of 5) (be PVM)
€ 12,959
Each (In a Pack of 5) (su PVM)
5
€ 10,71
Each (In a Pack of 5) (be PVM)
€ 12,959
Each (In a Pack of 5) (su PVM)
5
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 5 - 5 | € 10,71 | € 53,55 |
| 10 - 95 | € 9,66 | € 48,30 |
| 100 - 245 | € 9,345 | € 46,72 |
| 250 - 495 | € 9,135 | € 45,68 |
| 500+ | € 8,925 | € 44,62 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
650 V
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
313 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Plotis
4.82mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
15.87mm
Typical Gate Charge @ Vgs
81 nC @ 10 V
Aukštis
20.82mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.3V
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products