N-Channel MOSFET, 20 A, 60 V, 3-Pin DPAK onsemi NTD5867NLG

RS kodas: 719-2901Gamintojas: onsemiGamintojo kodas: NTD5867NLT4G
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

50 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

36 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

6.73mm

Plotis

6.22mm

Transistor Material

Si

Typical Gate Charge @ Vgs

15 nC @ 10 V

Number of Elements per Chip

1

Minimali darbinė temperatūra

-55 °C

Aukštis

2.38mm

Produkto aprašymas

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 0,911

Each (In a Pack of 5) (be PVM)

€ 1,102

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 20 A, 60 V, 3-Pin DPAK onsemi NTD5867NLG
Pasirinkite pakuotės tipą
sticker-462

€ 0,911

Each (In a Pack of 5) (be PVM)

€ 1,102

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 20 A, 60 V, 3-Pin DPAK onsemi NTD5867NLG
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
5 - 45€ 0,911€ 4,56
50 - 120€ 0,748€ 3,74
125 - 245€ 0,729€ 3,64
250 - 495€ 0,689€ 3,44
500+€ 0,64€ 3,20

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

50 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

36 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

6.73mm

Plotis

6.22mm

Transistor Material

Si

Typical Gate Charge @ Vgs

15 nC @ 10 V

Number of Elements per Chip

1

Minimali darbinė temperatūra

-55 °C

Aukštis

2.38mm

Produkto aprašymas

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more