onsemi N-Channel MOSFET, 12 A, 60 V, 3-Pin DPAK NTD3055L104T4G

RS kodas: 100-8063Gamintojas: onsemiGamintojo kodas: NTD3055L104T4G
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

104 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

48 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +15 V

Plotis

6.22mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

6.73mm

Typical Gate Charge @ Vgs

7.4 nC @ 5 V

Maksimali darbinė temperatūra

+175 °C

Aukštis

2.38mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

Czech Republic

Produkto aprašymas

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Sandėlio informacija laikinai nepasiekiama.

€ 1 128,12

€ 0,451 Each (On a Reel of 2500) (be PVM)

€ 1 365,03

€ 0,546 Each (On a Reel of 2500) (su PVM)

onsemi N-Channel MOSFET, 12 A, 60 V, 3-Pin DPAK NTD3055L104T4G
sticker-462

€ 1 128,12

€ 0,451 Each (On a Reel of 2500) (be PVM)

€ 1 365,03

€ 0,546 Each (On a Reel of 2500) (su PVM)

onsemi N-Channel MOSFET, 12 A, 60 V, 3-Pin DPAK NTD3055L104T4G
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

104 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

48 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +15 V

Plotis

6.22mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

6.73mm

Typical Gate Charge @ Vgs

7.4 nC @ 5 V

Maksimali darbinė temperatūra

+175 °C

Aukštis

2.38mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

Czech Republic

Produkto aprašymas

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more