P-Channel MOSFET, 12 A, 60 V, 3-Pin DPAK onsemi NTD2955TG

RS kodas: 124-5400Gamintojas: onsemiGamintojo kodas: NTD2955T4G
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

P

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

55 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

6.22mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Transistor Material

Si

Ilgis

6.73mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Aukštis

2.38mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

Czech Republic

Produkto aprašymas

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 0,574

Each (On a Reel of 2500) (be PVM)

€ 0,695

Each (On a Reel of 2500) (su PVM)

P-Channel MOSFET, 12 A, 60 V, 3-Pin DPAK onsemi NTD2955TG
sticker-462

€ 0,574

Each (On a Reel of 2500) (be PVM)

€ 0,695

Each (On a Reel of 2500) (su PVM)

P-Channel MOSFET, 12 A, 60 V, 3-Pin DPAK onsemi NTD2955TG
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

P

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

55 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

6.22mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Transistor Material

Si

Ilgis

6.73mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Aukštis

2.38mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

Czech Republic

Produkto aprašymas

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more