N-Channel MOSFET, 40 A, 650 V, 3-Pin D2PAK onsemi NTB082N65S3F

RS kodas: 178-4252Gamintojas: onsemiGamintojo kodas: NTB082N65S3F
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

650 V

Pakuotės tipas

D2PAK (TO-263)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

82 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

313 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Plotis

9.65mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

10.67mm

Typical Gate Charge @ Vgs

81 nC @ 10 V

Aukštis

4.58mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.3V

Kilmės šalis

China

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€ 6,195

Each (On a Reel of 800) (be PVM)

€ 7,496

Each (On a Reel of 800) (su PVM)

N-Channel MOSFET, 40 A, 650 V, 3-Pin D2PAK onsemi NTB082N65S3F
sticker-462

€ 6,195

Each (On a Reel of 800) (be PVM)

€ 7,496

Each (On a Reel of 800) (su PVM)

N-Channel MOSFET, 40 A, 650 V, 3-Pin D2PAK onsemi NTB082N65S3F
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

650 V

Pakuotės tipas

D2PAK (TO-263)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

82 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

313 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Plotis

9.65mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

10.67mm

Typical Gate Charge @ Vgs

81 nC @ 10 V

Aukštis

4.58mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.3V

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more