N-Channel MOSFET, 150 mA, 30 V, 3-Pin SC-75 ON Semiconductor NTA7002NT1G

RS kodas: 780-0501Gamintojas: onsemiGamintojo kodas: NTA7002NT1G
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

150 mA

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SC-75

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

7.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Plotis

0.9mm

Transistor Material

Si

Maksimali darbinė temperatūra

+150 °C

Ilgis

1.65mm

Number of Elements per Chip

1

Aukštis

0.8mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel MOSFET with Schottky Diode, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 0,18

Each (In a Pack of 50) (be PVM)

€ 0,218

Each (In a Pack of 50) (su PVM)

N-Channel MOSFET, 150 mA, 30 V, 3-Pin SC-75 ON Semiconductor NTA7002NT1G
Pasirinkite pakuotės tipą
sticker-462

€ 0,18

Each (In a Pack of 50) (be PVM)

€ 0,218

Each (In a Pack of 50) (su PVM)

N-Channel MOSFET, 150 mA, 30 V, 3-Pin SC-75 ON Semiconductor NTA7002NT1G
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
50 - 450€ 0,18€ 8,98
500 - 1200€ 0,165€ 8,24
1250 - 2450€ 0,155€ 7,77
2500 - 4950€ 0,143€ 7,14
5000+€ 0,13€ 6,51

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

150 mA

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SC-75

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

7.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Plotis

0.9mm

Transistor Material

Si

Maksimali darbinė temperatūra

+150 °C

Ilgis

1.65mm

Number of Elements per Chip

1

Aukštis

0.8mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel MOSFET with Schottky Diode, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more