onsemi MMBF4393LT1G N-Channel JFET, 30 V, Idss 5 to 30mA, 3-Pin SOT-23
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
5 to 30mA
Maximum Drain Source Voltage
30 V
Maximum Gate Source Voltage
+30 V
Maximum Drain Gate Voltage
30V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
100 Ω
Tvirtinimo tipas
Surface Mount
Pakuotės tipas
SOT-23
Kaiščių skaičius
3
Drain Gate On-Capacitance
14pF
Source Gate On-Capacitance
14pF
Matmenys
3.04 x 1.4 x 1.01mm
Minimali darbinė temperatūra
-55 °C
Maksimali darbinė temperatūra
+150 °C
Ilgis
3.04mm
Aukštis
1.01mm
Plotis
1.4mm
Produkto aprašymas
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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Patikrinkite dar kartą.
€ 0,217
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 0,262
Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
500
€ 0,217
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 0,262
Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
500
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 500 - 950 | € 0,217 | € 10,83 |
| 1000+ | € 0,187 | € 9,36 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
5 to 30mA
Maximum Drain Source Voltage
30 V
Maximum Gate Source Voltage
+30 V
Maximum Drain Gate Voltage
30V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
100 Ω
Tvirtinimo tipas
Surface Mount
Pakuotės tipas
SOT-23
Kaiščių skaičius
3
Drain Gate On-Capacitance
14pF
Source Gate On-Capacitance
14pF
Matmenys
3.04 x 1.4 x 1.01mm
Minimali darbinė temperatūra
-55 °C
Maksimali darbinė temperatūra
+150 °C
Ilgis
3.04mm
Aukštis
1.01mm
Plotis
1.4mm
Produkto aprašymas
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products