onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)

RS kodas: 178-4811Gamintojas: onsemiGamintojo kodas: MJD112-1G
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Transistor Type

NPN

Maximum Continuous Collector Current

2 A

Maximum Collector Emitter Voltage

100 V

Maximum Emitter Base Voltage

5 V

Pakuotės tipas

IPAK (TO-251)

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Transistor Configuration

Single

Number of Elements per Chip

1

Minimum DC Current Gain

1000

Maximum Base Emitter Saturation Voltage

4 V

Maximum Collector Base Voltage

100 V

Maximum Collector Emitter Saturation Voltage

3 V

Maximum Collector Cut-off Current

20µA

Aukštis

6.35mm

Plotis

2.38mm

Maximum Power Dissipation

20 W

Minimali darbinė temperatūra

-65 °C

Matmenys

6.73 x 2.38 x 6.35mm

Maksimali darbinė temperatūra

+150 °C

Ilgis

6.73mm

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Galbūt jus domina
onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)
€ 0,779Už kiekviena vnt. (tiekiama tuboje) (be PVM)

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Sandėlio informacija laikinai nepasiekiama.

€ 0,55

Each (In a Tube of 75) (be PVM)

€ 0,666

Each (In a Tube of 75) (su PVM)

onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)
sticker-462

€ 0,55

Each (In a Tube of 75) (be PVM)

€ 0,666

Each (In a Tube of 75) (su PVM)

onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Vamzdelis
75 - 75€ 0,55€ 41,25
150 - 300€ 0,518€ 38,83
375+€ 0,495€ 37,12

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina
onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)
€ 0,779Už kiekviena vnt. (tiekiama tuboje) (be PVM)

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Transistor Type

NPN

Maximum Continuous Collector Current

2 A

Maximum Collector Emitter Voltage

100 V

Maximum Emitter Base Voltage

5 V

Pakuotės tipas

IPAK (TO-251)

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Transistor Configuration

Single

Number of Elements per Chip

1

Minimum DC Current Gain

1000

Maximum Base Emitter Saturation Voltage

4 V

Maximum Collector Base Voltage

100 V

Maximum Collector Emitter Saturation Voltage

3 V

Maximum Collector Cut-off Current

20µA

Aukštis

6.35mm

Plotis

2.38mm

Maximum Power Dissipation

20 W

Minimali darbinė temperatūra

-65 °C

Matmenys

6.73 x 2.38 x 6.35mm

Maksimali darbinė temperatūra

+150 °C

Ilgis

6.73mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina
onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)
€ 0,779Už kiekviena vnt. (tiekiama tuboje) (be PVM)