Techniniai dokumentai
Specifikacijos
Markė
onsemiTransistor Type
NPN
Maximum DC Collector Current
2 A
Maximum Collector Emitter Voltage
600 V
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Maximum Power Dissipation
50 W
Minimum DC Current Gain
12
Transistor Configuration
Single
Maximum Collector Base Voltage
1200 V
Maximum Emitter Base Voltage
12 V
Maximum Operating Frequency
1 MHz
Kaiščių skaičius
3
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Matmenys
6.73 x 6.22 x 2.39mm
Produkto aprašymas
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 0,332
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 0,402
Už kiekviena vnt. (tiekiama riteje) (su PVM)
10
€ 0,332
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 0,402
Už kiekviena vnt. (tiekiama riteje) (su PVM)
10
Techniniai dokumentai
Specifikacijos
Markė
onsemiTransistor Type
NPN
Maximum DC Collector Current
2 A
Maximum Collector Emitter Voltage
600 V
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Maximum Power Dissipation
50 W
Minimum DC Current Gain
12
Transistor Configuration
Single
Maximum Collector Base Voltage
1200 V
Maximum Emitter Base Voltage
12 V
Maximum Operating Frequency
1 MHz
Kaiščių skaičius
3
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Matmenys
6.73 x 6.22 x 2.39mm
Produkto aprašymas
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.