onsemi HGTG20N60A4 IGBT, 70 A 600 V, 3-Pin TO-247, Through Hole
Technical Document
Product details
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 25.00
€ 5.00 Each (Supplied in a Tube) (Exc. Vat)
€ 30.25
€ 6.05 Each (Supplied in a Tube) (inc. VAT)
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5
Stock information temporarily unavailable.
| Quantity | Unit price |
|---|---|
| 5 - 9 | € 5.00 |
| 10 - 14 | € 4.95 |
| 15 - 19 | € 4.80 |
| 20+ | € 4.70 |
Ideate. Create. Collaborate
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Technical Document
Product details
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products