onsemi FGH80N60FD2TU IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole
Techniniai dokumentai
Specifikacijos
Markė
onsemiMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
290 W
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Single
Matmenys
15.6 x 4.7 x 20.6mm
Minimali darbinė temperatūra
-55 °C
Maksimali darbinė temperatūra
+150 °C
Kilmės šalis
China
Produkto aprašymas
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 5,67
už 1 vnt. (be PVM)
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už 1 vnt. (su PVM)
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€ 5,67
už 1 vnt. (be PVM)
€ 6,86
už 1 vnt. (su PVM)
1
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| kiekis | Vieneto kaina |
|---|---|
| 1 - 9 | € 5,67 |
| 10 - 49 | € 3,36 |
| 50 - 149 | € 3,31 |
| 150 - 299 | € 3,20 |
| 300+ | € 3,15 |
Ideate. Create. Collaborate
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
onsemiMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
290 W
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Single
Matmenys
15.6 x 4.7 x 20.6mm
Minimali darbinė temperatūra
-55 °C
Maksimali darbinė temperatūra
+150 °C
Kilmės šalis
China
Produkto aprašymas
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products